The peaks of localized energy states were separated from the detrapping current curves by means of poling temperature scanning method.

通过热释电度扫描法分离出对解俘获电流峰贡献的局域能级峰。

Also, High electric field annealing of stressed PMOSFET and detrapping of trapped electrons on the gate oxide are studied deeply.

重点研究了PMOS器件的高场应和氧层陷阱电子的陷阱机制。