Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
字(word, 4位元)的记忆体存取允许不对齐记忆体位址,字是以低位字节前的顺序储存记忆体中。
Word sized memory access is allowed to unaligned memory addresses.Words are stored in the little-endian order.
字(word, 4位元)的记忆体存取允许不对齐记忆体位址,字是以低位字节前的顺序储存记忆体中。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现氮化镓材具有室温铁磁性的性质,被预期能运用磁性记忆体的元件和积体电路的材。
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