95 Abstract With the rapid development of the IC manufacture, the critical dimension(CD) of the manufacturable CMOS technology has been put into 90nm, even 65nm and below from 130nm.
摘 要 随着IC制造技术
快速发展,可

CMOS技术,其特征线宽也由0.13um
入了90nm甚至65nm及以下。
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When you're ready to capture a high-resolution image, the phosphorescent screen moves out of the way, and the image is captured using the second system with a more sensitive CMOS camera that has a higher resolution and dynamic range.
当您准备捕捉高分辨率图像时,磷光屏会移开,然后使用第二套系统, 该系统配备了一台分辨率
动态范围更高的CMOS相机来捕捉图像。