The second method to remove material is CMP,   which is chemical mechanical planarization.

去除材料的第二种方法是 CMP，即化学机械平坦化。

CMP uses a controlled slurry of sub-micron ceramic particles to gently scrape and flatten the bumpy features.

化学机械抛光（CMP）利用含有亚微米级陶的受控悬浮液，轻柔地刮擦并平整那些凹凸不平的表面。

CMP applies slurry and uses abrasive pads to grind  and polish away the top surface of the wafer, making it perfectly flat.

CMP 采用浆料并用研磨垫来研磨和抛光晶圆的顶面，全平整。

Meanwhile, CMP slurries are continually flushed with water to keep their fine particles from forming chunks that would tear apart the fragile copper lines.

同时，CMP浆料会不断用水冲洗，以防止细小聚集成块，从而撕裂脆弱的铜线。

Before the next level of copper lines are added, this one's uneven lines must be polished flat, to near-atomic precision, using a sophisticated grinding process called chemical mechanical polishing, or CMP.

在添加下一层铜线之前，必须用一种称为化学机械抛光（CMP）的高级研磨工艺，将当前这一层不平整的线条打磨至接近原子级的平滑度。

CMP levels off the top  layers of the wafer and is typically used as the last step in a cycle of processes in order to  prepare the wafer for another layer to be added.

CMP 可平整晶圆的顶层，通常用作工艺周期的最后一步，为在晶圆上添加另一层做好准备。