For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.

另外以感容量(HP4284A)进行C-V曲线量测；以微安培量(HP4140B)进行J-V曲线量测。

The crystal structure was studied by means of X-ray diffraction,magnetic disaccommodation measurements were carry out with a computer aided system based on a LCR bridge.

用X射线衍射对粉的结构进行了观测,磁导率减落测量用算机辅助系统的抗自动测量(LCR桥)来完成。