The design procedure of a radiation sensitive switch for prevention of latchup is described in detail.

介绍用于抗锁的辐射敏感开关。

An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.

从硅CMOS器件的锁效应入手,提出锁的新方法—伪锁路径法。