The second method to remove material is CMP, which is Chemical Mechanical Planarization.

第二种去除材料的方法是化学机械面化，简称CMP。

We pulled blood work, and we pulled these basic biomarkers, CBC, CMP, lipid panel, hormone panel, and nutrient deficiencies.

我们进行了血液检查，提取了这些基本生物标志物：全血细胞计数（CBC）、综合代谢面板（CMP）、脂质谱、激素谱养缺乏情况。

CMP uses a controlled slurry of sub-micron ceramic particles to gently scrape and flatten the bumpy features.

化学机械抛光（CMP）利用含有亚微米陶瓷颗粒的受控悬浮液，轻柔地刮擦并整那些凹的表面。

CMP applies slurry and uses abrasive pads to grind and polish away the top surface of the wafer, making it perfectly flat.

化学机械面化使用浆液和研磨垫打磨并抛光晶片的表面，使其完全坦。

Meanwhile, CMP slurries are continually flushed with water to keep their fine particles from forming chunks that would tear apart the fragile copper lines.

同时，CMP浆料会断用水冲洗，防止其细小颗粒聚集成块，从而撕裂脆弱的铜线。

Before the next level of copper lines are added, this one's uneven lines must be polished flat, to near-atomic precision, using a sophisticated grinding process called chemical mechanical polishing, or CMP.

在添加下一层铜线之前，必须使用一种称为化学机械抛光（CMP）的高研磨工艺，将当前这一层整的线条打磨至接近原子的滑度。

CMP levels off the top layers of the wafer and is typically used as the last step in a cycle of processes in order to prepare the wafer for another layer to be added.

化学机械面化使晶圆的顶层变得整，通常作为一系列工艺循环中的最后一步，准备在晶圆上添加另一层。