The one dimensional continuity equations of n-on-p planar PN junction are solved at different boundary conditions. Generalized solutions of photocarrier concentration are given in this paper.
摘要对一维情况下平面PN结

性方程进行了求解,给
了不同边界条件下光

子浓度
一般形式解,并对结果进行了分析讨论。
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The basic mechanic is this: When a photon hits this junction of materials in the photodiode here, called a PN junction, an atom's electron absorbs the photon's energy and as a result it jumps up to a higher energy state and leaves atom.
基本机制是这样
:
子撞击
电二极管中
材料结(称为 PN 结)时,原子
电子会吸收
子
能量,结果它跳升到更高
能态并离开原子。