73.the grid circuit is out of order.

极电路发生故。

The next stage was the triode, which uses a third electrode called the grid.

下一阶段是三极管，它使用了一个称为极的第三电极。

Then the next control gate for the second layer asks for the charge level in the second cell, and so on up the string, each cell sending their information up to the highway or bitline.

然后第二层的控制极请求第二个单元的电荷水平， 依此类推，沿着串向上每个单元都将它们的信息发送到位线或高速公路。

So I mentioned that silicon has, well, when you make a transistor, you have this gate contact that sits on top of the conduction channel.

所以我提到，硅材料制造晶体管时具有这样的特性：你有一个极接触，它位于导电通道的顶部。

So because if we apply a voltage, some current will flow into the gate.

所以因为如果我们施电压，一些电流会流入极。

Fortunately, the memory cells are organized in pages, and every cell in a page shares a common control gate, and thus, all information from an entire page is read simultaneously.

幸运的是， 存储单元被组织成页，每页中的所有单元共享一个公共控制极，因此， 整个页的信息可以同时读取。

And then change that voltage that's applied at what's called the gate, the gate of the transistor.

然后改变施所谓的晶体管极上的电压。

What's interesting is that if we increase the voltage that we put on the gate, we can make them switch faster.

有趣的是，如果我们增施极上的电压，我们可以使它们切换得更快。

In addition, we have to add a control gate that selects between rows, so that only one row is using the bitline at a time.

此外， 我们还需要添一个行选择用的控制极，以便一次只有一个行使用位线。

And now we're down to gates that are seven nanometers, which is state of the art right now.

而现我们已经达到了7纳米的极尺寸，这当前是最先进的技术。

When we can charge the gate faster, we can switch faster because charging the gate is essentially a switching operation.

当我们可以更快地为极充电时，我们可以更快地切换，因为对极充电本质上是一种开关操作。

Next, we step up the voltage on the shared gate and check if any other channels have turned on, and we see that this channel is now on.

接下来， 我们提高共享极上的电压， 并检查是否有其他通道导通，我们发现这个通道现导通了。

So, for example, I said you have a left contact, a right contact, and some space between them where the gate electrode sits.

所以，比如说，你有一个左接触，一个右接触， 以及它们之间放置极电极的一些空间。

And a higher current means that we can put more charges into the gate capacitance and thereby turn the MOSFET on faster or discharge it faster and turn it off faster.

更高的电流意味着我们可以将更多的电荷放入极电容，从而更快地打开 MOSFET 或更快地放电并更快地关闭它。

However, rather than duplicate the control gates, we're going to have every cell in the same page share a common control gate.

然而，我们不会复制控制极，而是让同一页面中的每个单元共享一个共同的控制极。

And then when you apply a voltage to that gate, you can either cause current to flow or turn it off.

然后当你向该极施电压时，你可以使电流流动或关闭它。

So the setup time, for example, is you need some time to chain, so to charge up all the gates of the MOSFET in such a D flip-flop or wherever else.

因此，例如，设置时间是您需要一些时间来链接，以便为此类 D 触发器或其他任何地方的 MOSFET 的所有极充电。

And part of scaling has been to gradually decrease the thickness of that gate insulator so that you can use a roughly similar voltage and still have the same current voltage characteristics.

缩放的一部分工作就是逐步减少极绝缘层的厚度，以便施大致相同的电压时，仍能保持相同的电流电压特性。

In separate episodes, we'll cover specifics as to how the charge trap flash works, how the bit line and control gate selectors work, and how these microchips are manufactured.

单独的章节中， 我们将详细介绍电荷陷阱闪存的工作原理，位线和控制极选择器是如何工作的， 以及这些微芯片是如何制造的。

Applying a voltage to the gate that is greater than the threshold voltage causes the channel to turn on, thus allowing electrons to flow through it.

向极施大于阈值电压的电压会使通道导通，从而允许电子流过。