[der] 巨磁阻。GMR巨磁阻磁头利
![](https://www.godic.net/tmp/wordimg/zwFYoE99@Jcu4W6rb6cSgbDnXvU=.png)
![](https://www.godic.net/tmp/wordimg/VjafIYC3@@Q0CeY81oDtHrC3ZQeA=.png)
![](https://www.godic.net/tmp/wordimg/@@PtStsFHTchnl7xLjmJdP8@@j5Yo=.png)
![](https://www.godic.net/tmp/wordimg/Z3rnf1nWvWWoMPvZlViwCdmxWUU=.png)
料
![](https://www.godic.net/tmp/wordimg/JFixGdWP0kUfowutoSfeQEULCn8=.png)
电阻值随磁场变化
![](https://www.godic.net/tmp/wordimg/JFixGdWP0kUfowutoSfeQEULCn8=.png)
原理来读取
![](https://www.godic.net/tmp/wordimg/U3J1QOlsTMDCQMArYCu4GpccBVY=.png)
片上
![](https://www.godic.net/tmp/wordimg/JFixGdWP0kUfowutoSfeQEULCn8=.png)
数据,但是GMR磁头使
![](https://www.godic.net/tmp/wordimg/zwFYoE99@Jcu4W6rb6cSgbDnXvU=.png)
了磁阻效应更
![](https://www.godic.net/tmp/wordimg/k0EFHrlucwowY4Y35vPNFDm@@IPg=.png)
![](https://www.godic.net/tmp/wordimg/JFixGdWP0kUfowutoSfeQEULCn8=.png)
![](https://www.godic.net/tmp/wordimg/Z3rnf1nWvWWoMPvZlViwCdmxWUU=.png)
料和多层薄膜结构,比MR磁头更为敏感,相同
![](https://www.godic.net/tmp/wordimg/JFixGdWP0kUfowutoSfeQEULCn8=.png)
磁场变化能引起更大
![](https://www.godic.net/tmp/wordimg/JFixGdWP0kUfowutoSfeQEULCn8=.png)
电阻值变化,实现更高
![](https://www.godic.net/tmp/wordimg/JFixGdWP0kUfowutoSfeQEULCn8=.png)
存储密度。
= gigantischer Magnetowiderstand
giant magnetoresistance, GMR
[der] 巨磁阻。GMR巨磁阻磁头利
![](https://www.godic.net/tmp/wordimg/zwFYoE99@Jcu4W6rb6cSgbDnXvU=.png)
![](https://www.godic.net/tmp/wordimg/VjafIYC3@@Q0CeY81oDtHrC3ZQeA=.png)
![](https://www.godic.net/tmp/wordimg/@@PtStsFHTchnl7xLjmJdP8@@j5Yo=.png)
![](https://www.godic.net/tmp/wordimg/Z3rnf1nWvWWoMPvZlViwCdmxWUU=.png)
料
![](https://www.godic.net/tmp/wordimg/JFixGdWP0kUfowutoSfeQEULCn8=.png)
电阻值随磁场变化
![](https://www.godic.net/tmp/wordimg/JFixGdWP0kUfowutoSfeQEULCn8=.png)
原理来读取
![](https://www.godic.net/tmp/wordimg/U3J1QOlsTMDCQMArYCu4GpccBVY=.png)
片上
![](https://www.godic.net/tmp/wordimg/JFixGdWP0kUfowutoSfeQEULCn8=.png)
数据,但是GMR磁头使
![](https://www.godic.net/tmp/wordimg/zwFYoE99@Jcu4W6rb6cSgbDnXvU=.png)
了磁阻效应更
![](https://www.godic.net/tmp/wordimg/k0EFHrlucwowY4Y35vPNFDm@@IPg=.png)
![](https://www.godic.net/tmp/wordimg/JFixGdWP0kUfowutoSfeQEULCn8=.png)
![](https://www.godic.net/tmp/wordimg/Z3rnf1nWvWWoMPvZlViwCdmxWUU=.png)
料和多层薄膜结构,比MR磁头更为敏感,相同
![](https://www.godic.net/tmp/wordimg/JFixGdWP0kUfowutoSfeQEULCn8=.png)
磁场变化能引起更大
![](https://www.godic.net/tmp/wordimg/JFixGdWP0kUfowutoSfeQEULCn8=.png)
电阻值变化,实现更高
![](https://www.godic.net/tmp/wordimg/JFixGdWP0kUfowutoSfeQEULCn8=.png)
存储密度。
giant magnetoresistance, GMR