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diode

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diode 专八

英音:/'daɪəʊd/美音:/ˈdaɪˌod/ 全球发音: 生词本: 添加笔记:
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n. [电]二极管
laser diode 激光二极管
light-emitting diode [电]发光二极管
diode laser 二极管激光器
light emitting diode 发光二极管
emitting diode 发光二极管;电致发光片
diode array 二极管矩阵
semiconductor diode 半导体二极管
schottky diode 肖特基二极管
diode rectifier [电]二极管整流器
rectifier diode 整流二极管;整窿极管
photo diode 光电二极体,光敏二极管
semiconductor laser diode 半导体激光二极管
zener diode 稳压二极管;齐纳二极管
diode bridge 二极管电桥

The tunnel diode monostable circuit with non-linear biasing plays an important role in millimicrosecond pulse techniques.

性偏置隧道二极管单稳路,在毫微秒脉冲技术中有广阔应用前途。

Finally, wirebonding technics in the retral packaging of Schottky power diodes is optimized by orthogonal experiment design.

最后用正交试验法对肖特基器件后部封装中压焊工艺进行了参数优化设计。

Furthermore, the authors observe the high gettering efficiency of Au to void in ragged backside of diodes.

高注量氦注入硅中并经热处理所形成微孔,对金属原子吸除作用已为大量研究所证实。

By adopting ridge waveguide unpumped absorbing region structure and by antireflection (AR) coating technology, the superluminescent diodes were fabricated.

采用直波导吸收区而后在器件出光腔面上镀制抗反射膜法制作超辐射发光二极管。

The diode intrinsic noise temperature of some milimeter Schottky mixer diode was measured and reviewed. A measurement method was described at room and cooled temperature.

本文对一些毫米波肖特基势混频二极管本征噪声温度进行了测试和分析。介绍了在常温和致冷下混频二极管本征噪声测试法。

Depth of field: with prqactices diode system (IDS), high-capacity ensures that the depth of field in the production of reliable. Autocompensation printing plate surface unevenness.

有了智能化二极管系统(IDS),高景深能力保证了生产可靠进行。自动补偿印版表面不均匀度。

Quantum well intermixing induced by impurity diffusion has been used in fabricating nonabsorbing windows in the cavity facets to improve the output power of high-power laser diodes.

杂质扩散诱导量子阱混杂技术可用于制作腔面非吸收窗口, 提高大功率半导体激光器输出功率。

This paper shows that under certain conditons it is possible to diminish and even eliminate the nonlinear distorsion of a peak envelope detector by biasing the diode adequately.

本文对一般所谓惰性失真和切削失真同时分析讨论而获得统一公式,并且发现对二极管加适当正偏压可以减小或消除失真。

The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.

即使在1mV正向偏置之下,1N3595漏电流一般会小于1皮安,此电路不会影响10pA或更大电流测量。

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