Several amorphic carbon films with different thickness were deposited on single crystal silicon by means of pulse laser ablating graphet target at room temprature.
用激光烧蚀石墨靶方法在单
表面沉积了
同厚度的非
。
Several amorphic carbon films with different thickness were deposited on single crystal silicon by means of pulse laser ablating graphet target at room temprature.
用激光烧蚀石墨靶方法在单表面沉积了同厚度的非。
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