The results also show that green band emission is due to transition from conduction band to deep acceptor level which result in antiposition defect of OZn.
同
法测量的530nm绿峰的发光衰变规律显示绿光主要源于导带至OZn反位缺陷深受主
级的跃迁。
The results also show that green band emission is due to transition from conduction band to deep acceptor level which result in antiposition defect of OZn.
同法测量的530nm绿峰的发光衰变规律显示绿光主要源于导带至OZn反位缺陷深受主级的跃迁。
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