Also, High electric field annealing of stressed PMOSFET and detrapping of trapped electrons on the gate oxide are studied deeply.
重

了退化PMOS器件的高场退火效应和氧化层陷阱电子的退陷阱机制。
Also, High electric field annealing of stressed PMOSFET and detrapping of trapped electrons on the gate oxide are studied deeply.
重

了退化PMOS器件的高场退火效应和氧化层陷阱电子的退陷阱机制。
The peaks of localized energy states were separated from the detrapping current curves by means of poling temperature scanning method.
通过热释电极化温度扫描法
离出对解俘获电流峰贡献的各局域能级峰。
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