A resistance macromodel for deep-submicron process epi-type substrate based on the 2D device simulation is presented.
摘要提出了一种基于二维器件模拟的深米工艺外延型衬底的电阻宏模型。
A resistance macromodel for deep-submicron process epi-type substrate based on the 2D device simulation is presented.
摘要提出了一种基于二维器件模拟的深米工艺外延型衬底的电阻宏模型。
The hydrated silicon dioxide with three layers structure of micron-submicron-millimicron was observed through TEM.
通电实验,观察到水合二氧化硅具有米米纳米三次结构。
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