Several amorphic carbon films with different thickness were deposited on single crystal silicon by means of pulse laser ablating graphet target at room temprature.
用激光烧蚀石墨靶方法在单晶硅衬底表面沉积了同厚度的非晶碳膜。
Several amorphic carbon films with different thickness were deposited on single crystal silicon by means of pulse laser ablating graphet target at room temprature.
用激光烧蚀石墨靶方法在单晶硅衬底表面沉积了同厚度的非晶碳膜。
声明:以上、词性分类均由互联自动生成,部分未经过人工审核,其表达内容亦代表本软件的观点;若发现问题,欢迎向我们指正。