Several amorphic carbon films with different thickness were deposited on single crystal silicon by means of pulse laser ablating graphet target at room temprature.
用激光烧蚀石墨靶方法在单晶硅衬底
面沉积了
同厚度
非晶碳
。
条理
,
形Several amorphic carbon films with different thickness were deposited on single crystal silicon by means of pulse laser ablating graphet target at room temprature.
用激光烧蚀石墨靶方法在单晶硅衬底面沉积了同厚度非晶碳。
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