In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现
氮化镓材料上具有室温铁磁性的性质，被预
磁性记忆体的元件和积体电路的材料上。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现氮化镓材料上具有室温铁磁性的性质，被预磁性记忆体的元件和积体电路的材料上。
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