5.通过激光剥离LLO(laser lift-off)获得独支撑GaN衬底和材料,这样位错密度降低两个数量级单位,同质延获得高质量的GaN。
Homoepitaxy can obtain high quality GaN.
5.通过激光剥离LLO(laser lift-off)获得独支撑GaN衬底和材料,这样位错密度降低两个数量级单位,同质延获得高质量的GaN。
Homoepitaxy can obtain high quality GaN.
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