The jitter is less than 3ns when the switch breakdown at front edge under the pluse with 400ns risetime, while the jitter shorts to about 1ns under the pulse with 80ns risetime.
引入紫外预电离作用后，开
大大减小，400ns
沿脉冲作用下开可小于3ns，80ns沿脉冲作用时开约1ns。
The jitter is less than 3ns when the switch breakdown at front edge under the pluse with 400ns risetime, while the jitter shorts to about 1ns under the pulse with 80ns risetime.
引入紫外预电离作用后，开大大减小，400ns沿脉冲作用下开可小于3ns，80ns沿脉冲作用时开约1ns。
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