You can seed it with more cold chocolate so you can chop up chocolate, put more cold chocolate in.

以加入晶粒物质使更多的巧克力冷凝，这样就以把巧克力切碎，放更多的冷巧克力进去。

It turns out are different at different frequencies depending on their grain structure.

原来它们不同频率下的表现会因为其晶粒结构而有所不同。

It just has larger and more crystalline grains.

它只是具有更大和更多的晶粒。

Well, my assumption would be that if you have larger grains, larger crystal structures, then it will be stronger, because a regular crystal arrangement is really strong.

我的假设是，如果有更大的晶粒，更大的晶体结构，那么它会更强，因为规则的晶体排列本身非常坚固。

A superpage consists of all the pages on each of the 18 chips that share the same die, plane, block, and page designation.

一个超级页由每个共享相同晶粒、平面、块和页标识的18个芯片上的所有页组成。

So because the energy levels are high, the grain size is coarser.

因此，由于能量水平较高，晶粒尺寸较粗。

The superstructure is made of a torsion-resistant welded structure fabricated from high strength fine grained structural steel.

上部结构由高强度细晶粒结构钢焊接而成，具有抗扭性能。

Opening the packaging, we find the GPU die which is noticeably different from the CPU.

打开包装，我们找到了图形处理器的晶粒，它与中央处理器明显不同。

So when you're bending it, you're causing those dislocations to glide through the grain.

当弯曲它时，使这些晶格缺陷晶粒中滑移。

When the temperature reaches 300 and 400, the deformation inside the grains becomes much more uniform.

当温度达到300至400时，晶粒内部的变形变得更加均匀。

First, at room temperature, we can see that the deformation inside the grain is mainly concentrated along a few slip traces, showing characteristics of planar slip.

首先，室温下，我们以看到晶粒内部的变形主要集中几条滑移线上，表现出平面滑移的特征。

So let's see what happens to the grain size when we heat treat a metal.

那么让我们来看看金属经过热处理后晶粒大小会发生什么变化。

In some grains, we even observe wavy slip characteristics To make this phenomenon clearer, I selected a few line segments inside the grains and performed trace analysis This image shows the strain variation along a specific line segment at different temperatures.

某些晶粒中，我们甚至观察到波状滑移特征。为了更清晰展示这一现象，我晶粒内部选取了几条线段进行痕迹分析。此图展示了不同温度下沿特定线段的应变变化情况。

When we look inside a single chip, we find that there's a stack of eight die.

当我们查看单个芯片内部时，会发现里面有一堆八个晶粒。

And the separate layers of the DRAM and SOC are each called a die.

并且，DRAM和SoC的各层都称为晶粒。

So, I've been trying to find and establish an intermediate experimental and characterization method to describe the strain localization behavior at the sub-grain scale.

因此，我一直努力寻找并建立一种介于实验与表征之间的方法，以描述亚晶粒尺度下的应变局部化行为。

As mentioned earlier, this 1T1C memory cell is one of 17 billion inside this single die and is organized into massive arrays called banks.

如前面提到的，这个1T1C存储单元是单个晶粒内的170亿个存储单元之一，并被组织成称为存储区的巨大数组。

In some grains, we can observe wavy slip characteristics To make it clearer, I selected a few lines inside the grains and performed trace analysis.

一些晶粒中，我们以观察到滑移特征呈波状。为了更清楚说明，我晶粒内部选取了几条线并进行了痕迹分析。

Instead of looking at this die, we're going to transition to a functional diagram and then reorganize the banks and bank groups.

与其看这个晶粒，我们将转向一个功能图，然后重新组织存储区和存储区组。

As the temperature increases to 200, we observe that the number of slip traces inside the grains seems to increase.

随着温度升高到200℃，我们观察到晶粒内部的滑移线数量似乎增加了。