This paper introduce the terminal-port characteristic relation of Nullor and the nullor eguivalent circuit of transistor.A method of analysing and designing parameter of bias circuit is given.
This paper shows that under certain conditons it is possible to diminish and even eliminate the nonlinear distorsion of a peak envelope detector by biasing the diode adequately.
The leakage of the 1N3595 diode is generally less than one picoampere even with 1mV of forward bias, so the circuit won't interfere with measurements of 10pA or more.
Incorporating array of metallic wires into the host media, such as ferrimagnet YIG under an external magnetic bias field, is a novel method to synthesize negative refractive index (NRI) material.