For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.

另外电感电容电阻计(HP4284A)进行C-V曲线；微安培计(HP4140B)进行J-V曲线。

The crystal structure was studied by means of X-ray diffraction,magnetic disaccommodation measurements were carry out with a computer aided system based on a LCR bridge.

X线衍对粉末样品的结构进行了观,磁导率减落计算机辅助系统的阻抗自动(LCR电桥)来完成。