The main structure have:Electromagnet and Heng galvanism source, numerical type Gauss account(the effect of Huo Er) and ammeter and volt account, have control dish of illuminate the system.

电磁铁和恒流电源、数字式高斯计 （霍尔效应）、安培计和伏特计、配有照制盘。

The devices have total ionizing dose (TID) capability of up to 300 Krad(Si), single event effect (SEE) immunity to 82 MeV, and are available in screened and commercial off- the-shelf (COTS) versions.

器件总离子注入能力高达300千拉德（硅），抗单粒子效应为82兆电子伏特，同时有屏蔽型和商用现货型产品。