The design procedure of a radiation sensitive switch for prevention of latchup is described in detail.
介绍
种用于抗
的辐射敏感开关。
The design procedure of a radiation sensitive switch for prevention of latchup is described in detail.
介绍种用于抗的辐射敏感开关。
An innovation for prevention latchup,pseudo-latchup path method,has been put forward that is based on latchup effects of bulk-Si CMOS devices.
从体硅CMOS器件的效应入手,提
制的种新方法—
路径法。
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