The crystal structure was studied by means of X-ray diffraction,magnetic disaccommodation measurements were carry out with a computer aided system based on a LCR bridge.
X射线衍射仪对粉末样品的结构进行了观测,磁导率减落测
算机辅助系统的
抗自动测
仪(LCR
桥)来完成。
The crystal structure was studied by means of X-ray diffraction,magnetic disaccommodation measurements were carry out with a computer aided system based on a LCR bridge.
X射线衍射仪对粉末样品的结构进行了观测,磁导率减落测
算机辅助系统的
抗自动测
仪(LCR
桥)来完成。
For electrical properties of MOS capacitors, the C-V curves were obtained by LCR meter (HP4284A), and picoampere meter (HP4140B) was used to measure the J-V curves.
另外以感
仪(HP4284A)进行C-V曲线
测;以微安培
仪(HP4140B)进行J-V曲线
测。
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