In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓材料
有室温铁磁性的性质，被预期能运用在磁性记忆体的元件和
体电路的材料。
In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.
发现在氮化镓材料有室温铁磁性的性质，被预期能运用在磁性记忆体的元件和体电路的材料。
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